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Infrared Emitting Diodes
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Part Name
Фe Min
Фe Typ
∆θ Typ
λp Typ
If
P
Package Type
RoHS
0.7 mw
1 mw
12 mw
15 mw
2 mw
3 mw
4.2 mw
5 mw
6 mw
13 mw
14 mw
2 mw
25 mw
3 mw
30 mw
6 mw
9 mw
±10 °
±13 °
±21 °
±25 °
±30 °
±32 °
±60 °
±9 °
850 nm
940 nm
950 nm
100 mA
50 mA
150 mW
250 mW
75 mW
77.5 mW
1.5 x 3.0 x 3.5, 17.5 leads
4.0 x 3.0 x 2.95, 17.5 leads
Leadless chip type
Leadless chip type with lens
Leadless chip type with lens, high output type
ø5 resin
Side-view type, current concentration type
Yes
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GL100MD0MP1
75 mW
Yes
GL100MD1MP1
150 mW
Yes
GL100MN0MP
1 mw
3 mw
±10 °
940 nm
50 mA
Leadless chip type with lens
Yes
GL100MN0MP1
Yes
GL100MN0MP1M
150 mW
GL100MN1MP
2 mw
6 mw
±10 °
940 nm
50 mA
150 mW
Leadless chip type with lens, high output type
Yes
GL100MN1MP1
Yes
GL100MN3MP
3 mw
6 mw
±9 °
940 nm
50 mA
Leadless chip type with lens, high output type
Yes
GL100MN3MP1
Yes
GL4800E0000F
0.7 mw
±30 °
950 nm
50 mA
150 mW
1.5 x 3.0 x 3.5, 17.5 leads
Yes
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